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InGaN Light-Emitting Diodes with Quantum-Well Structures

Published online by Cambridge University Press:  21 February 2011

Shuji Nakamura
Shuji Nakamura*
Affiliation:
R&D Department, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan e-mail: shuji@nichia.co.jp
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Abstract

InGaN single-quantum-well-structure (SQW) light-emitting diodes (LEDs) with an emission wavelength between violet and orange were fabricated. The maximum on-axis luminous intensity of green LEDs was 12 cd and the external quantum efficiency was as high as 6.3 % at a forward current of 20 mA, while those of blue LEDs were 2 cd and 9.1 %, respectively. The peak wavelength and the full width at half-maximum of the green LEDs were 520 nm and 30 nm, respectively, while those of blue LEDs were 450 nm and 20 nm, respectively. The color of green InGaN SQW LEDs was greener than those of conventional GaP and AlInGaP LEDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 879
Copyright
Copyright © Materials Research Society 1996

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References

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