Skip to main content Accessibility help

InGaAs/GaAs Quantum Well Structures Grown by Migration-Enhanced Epitaxy

  • J.E. Wu (a1), H.M. Yoo (a1) and T.G. Stoebe (a1)


GaAs/In.2Ga.8As/GaAs quantum well structures containing InGaAs layers of thickness over and under the critical thickness (hc) were studied, as grown by both conventional molecular beam epitaxy (C-MBE) and migration-enhanced epitaxy (MEE) techniques. A 6.0 monolayer per cycle (ML/cyc) growth rate, in contrast to a one or less-than-one ML/cyc growth rate used in a conventional MEE process, was used to grow In.2Ga.8As layers over hc. As-grown samples were characterized via photoluminescence, X-ray diffraction, and transmission electron microscopy (TEM). The 6.0 ML/cyc MEE-grown layers over hc show superior optical quality to MBE-grown layers with the same thickness. Both X-ray diffraction and TEM microstructure results indicate that the 6.0 ML/cyc MEE-grown In.2Ga.8As layers are still strained layers while those grown by conventional MBE method are not. The 6.0 ML/cyc MEE process seems to be advantageous for growing InGaAs layers over the critical thickness.



Hide All
1. Osbourn, G.C., Phys. Rev. B127, 5126 (1983)
2. Matthews, J.W. and Blakeslee, A.E., J. of Crystal Growth, 22, 118 (1974)
3. People, R. and Bean, J.C., Appl. Phys. Lett. 47, 32 (1985)
4. Horikoshi, Y., Kawashima, M., and Yamaguchi, H., Jpn. J. Appl, Phys. 25(10), L868(1986)
5. Zou, J., Usher, B. F., Cockayne, D. J. H. and Glaisher, R.. J. of Electronic Matls. 20, 885 (1991).
6. Anderson, T. G., Chen, Z. G., Kulakovaskii, V. D., Uddin, A. and Vallin, J. T., Appl. Phys. Lett. 51, 752 (1987).
7. Orders, P.J. and Usher, B.F., Appl.Phys.Lett. 50, 980 (1987)
8. Bravman, J.C. and Sinclair, R., J. Electron Microscopy Technique, 1, 53 (1984).

Related content

Powered by UNSILO

InGaAs/GaAs Quantum Well Structures Grown by Migration-Enhanced Epitaxy

  • J.E. Wu (a1), H.M. Yoo (a1) and T.G. Stoebe (a1)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.