Skip to main content Accessibility help
×
Home

InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy

  • Y. Nakata (a1), Y. Sugiyama (a1), T. Inata (a1), O. Ueda (a1), S. Sasa (a1), S. Muto (a1) and T. Fujii (a1)...

Abstract

We have successfully grown InGaAs/AIAsSb quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time. We studied the band-edge discontinuity and the interface abruptness of these heterostructures. A cross-sectional lattice image of InGaAs/AlAsSb QWs taken along the [100] axis showed atomically smooth heterointerfaces. The photoluminescence (PL) peak energy of the 20-nm-thick InGaAs well (0.758 eV) was lower than that of InGaAs bulk (0.799 eV), indicating that the InGaAs/AlAsSb system has a staggered lineup. The conduction band-edge discontinuity, ΔEc, was evaluated to be 1.74 ± 0.04 eV, which was derived from parameter fitting to the 4.2 K PL peak energy shifts of QWs as a function of InGaAs well width between 2.1 nm and 20 nm. The corresponding valence band-edge discontinuity, ΔEv, was 0.07 ± 0.02 eV. We also fabricated a resonant tunneling barrier structure of InGaAs (4.4 nm)/AlAsSb (2.9 nm), and obtained a very high peak-to-valley current ratio of 15 at 300 K.

Copyright

References

Hide All
1. Inata, T., Muto, S., Nakata, Y., Sasa, S., Fujii, T., and Hiyamizu, S., Jpn. J. Appl. Phys. 26, L1332 (1987).10.1143/JJAP.26.L1332
2. Tanoue, T. and Sakaki, H., Appl. Phys. Lett. 41,67(1982).10.1063/1.93331
3. Cherng, M. J., Stringfellow, G. B., and Cohen, R. M., Appl. Phys. Lett. 44. 677 (1984).10.1063/1.94874
4. Sakaki, H., Chang, L. L., Ludeke, R., Chang, Chin-An, Sai-Halasz, G. A., and Esaki, L., Appl. Phys. Lett. 1, 211 (1977)10.1063/1.89609
5. Klem, J., Huang, D., Morkog, H., Ihm, Y. E., and Otsuka, N., Appl. Phys. Lett. 5Q, 1364 (1987).10.1063/1.97857
6. Nakata, Y., Fujii, T., Sandhu, A., Sugiyama, Y., and Miyauchi, E., J. Crystal Growth 91,655 (1988).10.1016/0022-0248(88)90137-6
7. Fujii, T., Nakata, Y., Sugiyama, Y., Toda, Y., and Miyauchi, E., Electron. Lett. 24, 1211 (1988).
8. Sugiyama, Y., Fujii, T., Nakata, Y., Muto, S., and Miyauchi, E., J. Crystal Growth 5, 363 (1989).10.1016/0022-0248(89)90419-3
9. Nakata, Y., Sugiyama, Y., Ueda, O., Sasa, S., Fujii, T., and Miyauchi, E., Abstracts of the 9th Int. Conf. on Crystal Growth (ICCG-9), p. 30, to be published in J. Crystal Growth.
10. Herman, M. H., Ward, I. D., Butirill, S. E. Jr., and Francke, G. L., in Advances in Materials, Processing and Devices in III-V Compound Semiconductors, edited by Sadana, D. K., Eastman, L. E., and Dupuis, R. (Mater. Res. Soc. Proc. 144, Pittsburgh, PA 1989).
11. Turner, W. J. and Reese, W. E., Radiative Recombination in Semiconductors, (Dunod, Paris 1965), p. 59
12. Vechen, J. A. Van and Bergstresser, T. K., Phys. Rev. B 1,3351 (1970).10.1103/PhysRevB.1.3351
13. Stringfellow, G. B., J. Electron. Mater. 10, 919 (1981).10.1007/BF02661008
14. Olego, D., Chang, T. Y., Dilberg, E., Caridi, E. A., and Pinczuk, A., Appl. Phys. Lett. 41,476 (1982).10.1063/1.93537
15. Inata, T., Muto, S., Nakata, Y., and Fujii, T., presented at the Sixteenth International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, 1989 (unpublished).

InGaAs/AWAsSb Heterostructures Lattice-Matched to InP GRown by Molecular Beam Epitaxy

  • Y. Nakata (a1), Y. Sugiyama (a1), T. Inata (a1), O. Ueda (a1), S. Sasa (a1), S. Muto (a1) and T. Fujii (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed