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Infrared Optical Studies of Semiconductors at Large Hydrostatic Pressures

Published online by Cambridge University Press:  10 February 2011

E. E. Haller  and
M. D. McCluskey
E. E. Haller
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720, USA
M. D. McCluskey*
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720, USA
*
* Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304 USA
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Abstract

Among the various external disturbances used in the study of semiconductors, including electric and magnetic fields as well as uniaxial pressure, large hydrostatic pressures can be employed to induce dramatic changes in host lattice, dopant and defect properties. Diamond anvil cells with an appropriate pressure medium (e.g. liquid N2 or alcohol mixtures) allow the application of pressures up to hundreds of kbar. In this pressure range the global conduction band minimum of a semiconductor can become a local minimum. GaAs for example changes near 45 kbar from a direct (Γ-band) to an indirect (X-band) semiconductor. Donors in GaAs and InP transform from their shallow, hydrogenic state to the DX configuration at hydrostatic pressures near 23 and 82 kbar, respectively. This donor configuration change has been studied using local vibrational mode (LVM) spectroscopy in the far infrared region of the electromagnetic spectrum. Recently we have investigated several LVM's of H-containing complexes in GaAs as a function of hydrostatic pressure at liquid He temperatures. Depending on the specific complex we find the LVM frequencies to vary either linearly, sub- or superlinearly with hydrostatic pressure. In the case of O in Si the vibrational mode changes its character from that of a harmonic oscillator to a rotor as pressure is applied. The implications of the pressure dependences of LVM's are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 371
Copyright
Copyright © Materials Research Society 1998

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