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Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

  • Masanobu Miyao (a1), Teruaki Motooka (a1), Nobuyoshi Natsuaki (a1) and Takashi Tokuyama (a1)


Electronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.



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1. Trumbore, F.A. (1960) Bell Syst. Tech. J. 39 205
2. Proc. Laser-Solid Interactions and Laser Processing ed. Ferris, S.D., Leamy, H.J. and Poate, J.M. American Inst. Phys., N.Y., (1979)
3. Miyao, M., Koyanagi, M., Tamura, H., Hashimoto, N. and Tokuyama, T. (1980) Jpn. J. Appl. Phys. Suppl. 19 129
4. Kohyama, S., Onga, S., Shibata, K. and Iizuka, H. (1980) Jpn. J. Appl. Phys. Suppl. 19 133
5. Natsuaki, N., Miyazaki, T., Ohkura, M., Nakamura, T., Tamura, M. and Tokuyama, T. this proceeding
6. Abram, R.A., Ress, G.J., Wilson, B.L.H. (1978) Advances in Physics 27 799
7. Spitzer, W.G. and Fan, H.Y. (1957) Phys. Rev. 106 882
8. Howarth, L.E. and Gilbert, J.F. (1963) J. Appl. Phys. 34 236
9. Subashiev, J.K., Dubrovskii, G.B. and Kukharskii, A.A. (1964) Sov. Phys. Solid State. 6 830
10. Chelikowsky, J.R. and Cohen, M.L. (1976) Phys. Rev. B 14 556


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