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Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

  • Masanobu Miyao (a1), Teruaki Motooka (a1), Nobuyoshi Natsuaki (a1) and Takashi Tokuyama (a1)

Abstract

Electronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

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