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Infrared Lattice Vibrations of Nitrogen-doped ZnO Thin Films

Published online by Cambridge University Press:  01 February 2011

Makoto Hirai  and
Ashok Kumar
Makoto Hirai
Affiliation:
mhirai@eng.usf.edu, Nanomaterials and Nanomanufacturing Research Center, University of South Florida, 4202 East Fowler Avenue, ENB 261B,, Tampa, FL, 33620-5350, United States
Ashok Kumar
Affiliation:
akumar@eng.usf.edu, University of South Florida, Department of Mechanical Engineering, Tampa, FL, 33620-5350, United States
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Abstract

Nitrogen (N) is the most promising p-type dopant for zinc oxide (ZnO), and its bonding state must be governed by the substitution of N atoms into anion sites. We have synthesized un-doped ZnO and N-doped ZnO thin films by utilizing a pulsed laser deposition (PLD) method. The N-doped ZnO thin film possessed shorter c-axis length than the un-doped ZnO thin film. This fact seems to be owing to that Zn-N bond length is shorter than Zn-O bond length in wurtzite structure. Besides, from the result of Fourier transform infrared (FT-IR) measurement, the absorption peak of the N-doped ZnO thin film emerged at 406 cm−1, and was attributed to transverse optical (TO) phonon of E1 mode. The infrared lattice vibrations of the N-doped ZnO thin films can be induced by the complex factors consisting of not only the decreases in reduced mass and interionic distance, but also the increase in covalency.

Keywords

infiltration (assembly)infrared (IR) spectroscopythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L07-07
Copyright
Copyright © Materials Research Society 2008

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