Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-26T15:11:00.340Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared Characterization of the Hydrogen Environments in Diamond Thin Films

Published online by Cambridge University Press:  26 February 2011

Y. M. LeGrice ,
E. C. Buehler ,
R. J. Nemanich ,
J. T. Glass ,
K. Kobashi ,
F. Jansen ,
M. A. Machonkin  and
C. C. Tsai
Y. M. LeGrice
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
E. C. Buehler
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
J. T. Glass
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695.
K. Kobashi
Affiliation:
Electronics Technology Center, Kobe Steel. Ltd., Kobe, Japan.
F. Jansen
Affiliation:
Xerox Corp., Webster, NY.
M. A. Machonkin
Affiliation:
Xerox Corp., Webster, NY.
C. C. Tsai
Affiliation:
Xerox Corp., Palo Alto, CA.
Get access

Abstract

CVD diamond films prepared under varying conditions have been investigated with IR and Raman spectroscopy. Raman spectroscopy was used to characterize the crystal structure, and ir absorption was used to determine the H bonding environments. The growth temperatures were varied in one series, while the CH4/H2 ratio was varied in another. The IR absorption of all the samples showed a weak broad band extending from approximately 2800 to 2970 cm−1 which was attributed to H bonded to sp3 C sites. There was no evidence of ir absorption at 3000 to 3200 cm−1 which would indicate H bonded to sp2 or sp1 C sites. For both series, the Raman measurements showed progression from diamond-like films to diamond films. The ir absorption showed a general trend of less H with more well ordered diamond structures. No sharp transition of the H incorporation vs the growth parameters was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 267
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Angus, J.C., Buck, F.A., Sunkara, M., Groth, T.F., Hayman, C.C., Gat, R., MRS Bulletin 14 (10), 38 (Oct. 1989).Google Scholar
2. Nemanich, R.J., Glass, J.T., Lucovsky, G. and Shroder, R.E., J. Vac. Sci. Tech. A6 1783 (1988).Google Scholar
3. Mitsuda, K., Kojima, Y., Yoshida, T., Akashi, K., J. Mater. Sci. 22, 1557 (1987).Google Scholar
4. Kobashi, K., Nishimura, K., Miyata, K., Kawate, Y., Glass, J.T., and Williams, B.E., SPIE Proceedings Vol. 969, Diamond Optics, 159 (1988).Google Scholar
5. Herzberg, G., Molecular Spectra and Molecular Structure II. Infrared and Raman Spectra of Polyatomic Molecules (D. Van Nostrand Co. Inc., Princeton NJ 1962).Google Scholar
6. Lucovsky, G.R., Nemanich, R.J., Knights, J.C., Phys. Rev. B 19, 2064 (1979).Google Scholar
7. Frenklach, M., Spear, K.E., J. Mater. Res. 3, 1322 (1988).Google Scholar