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Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure

  • Huai-An Chin (a1), Chih-I Huang (a2), Yuh-Renn Wu (a3), I-Chun Cheng (a4), Jian Z. Chen (a5), Kuo-Chuang Chiu (a6) and Tzer-Shen Lin (a7)...

Abstract

ZnO has shown great promise for the application in optoelectronic devices. Since the modulation of conductivity is one of the key issues in device performances, we have applied the Monte Carlo method to analyze the mobility of poly-crystalline MgZnO/ZnO heterostructure thin film layer in this paper. The effects of the grain boundary scattering, ionized impurity scattering, as well as phonon scattering are considered. Our study shows that with a design of modulation doping by including the effects of spontaneous and piezoelectric polarization, the grain boundary potential can be suppressed to improve the mobility of the ZnO layer by order(s) of magnitude. Simulation results are also confirmed by our experimental works that polarization effects play an important role to attract carriers and to increase the mobility.

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1 Su, S. C., Lu, Y. M., Zhang, Z. Z., Shan, C. X., Li, B. H., Shen, D. Z., Yao, B., Zhang, J. Y., Zhao, D. X., and Fan, X. W., Appl. Phys. Lett., vol. 93, p. 082108, 2008.10.1063/1.2977478
2 Cohen, D. J., Ruthe, K. C., and Barnett, S. A., J. Appl. Phys., vol. 96, p. 459, 2004 10.1063/1.1760239
3 Sun, J., Mourey, D. A., Zhao, D., Park, S. K., Nelson, S. F., Levy, D. H., Freeman, D., Corvan, P. C., Tutt, L., and Jackson, T. N., IEEE Electron Dev. Lett., vol. 29, p. 721, 2008.10.1109/LED.2008.923206
4 Tampo, H., Matsubara, K., Yamada, A., Shibata, H., Fons, P., Yamagata, M., Kanie, H., and Niki, S., Journal of Crystal Growth, vol. 301, p. 358, 2007.10.1016/j.jcrysgro.2006.11.169
5 Wu, Yuh-Renn and Singh, Madhusudan and Singh, Jasprit, IEEE Trans. Electron Dev., vol. 53, p. 588, 2006.
6 Wu, Yuh-Renn and Singh, Jasprit, J. Appl. Phys., vol. 101, p. 113712, 2007.10.1063/1.2745286
7 Guo, B., Ravaioli, U., and Staedele, M., Computer Physics Communications, vol. 175, p. 482, 2006.10.1016/j.cpc.2006.06.008
8 Joshi, R. P. and Srivastava, A., Appl. Phys. Lett., vol. 69, p. 1786, 1996.10.1063/1.117486
9 Kim, S., Kang, B. S., Ren, F., Heo, Y. W., Ip, K., Norton, D. P., and Pearton, S. J., Appl. Phys. Lett., vol. 84, no. 11, p. 1904, 2004.10.1063/1.1669082
10 Shimura, Y., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., and Hosono, H., Thin Solid Films, vol. 516, p. 5899, 2008.10.1016/j.tsf.2007.10.051
11 Hiramatsu, T., Furuta, M., Furuta, H., Matsuda, T., Li, C., and Hirao, T., Journal of Crystal Growth, vol. 311, no. 2, p. 282, 2009.10.1016/j.jcrysgro.2008.10.097
12 Nunes, P., Fortunato, E., and Martins, R., Thin Solid Films, vol. 383, p. 277, 2001.10.1016/S0040-6090(00)01577-7
13 Tampo, H., Shibata, H., Maejima, K., Yamada, A., Matsubara, K., Fons, P., Kashiwaya, S., Niki, S., Chiba, Y., Wakamatsu, T., and Kanie, H., Appl. Phys. Lett., vol. 93, p. 202104, 2008.10.1063/1.3028338
14 Malashevich, A. and Vanderbilt, D., Appl. Phys. Lett., vol. 93, p. 045106, 2008.

Keywords

Influences of Polarization Effects in the Electrical Properties of Polycrystalline MgZnO/ZnO Heterostructure

  • Huai-An Chin (a1), Chih-I Huang (a2), Yuh-Renn Wu (a3), I-Chun Cheng (a4), Jian Z. Chen (a5), Kuo-Chuang Chiu (a6) and Tzer-Shen Lin (a7)...

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