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Influence of the SOI Surface Morphology on Crystal Orientation and Device Characteristics

Published online by Cambridge University Press:  28 February 2011

Takemitsu KUNIO ,
Ken-Ichi OYAMA  and
Tadayoshi ENOMOTO
Takemitsu KUNIO
Affiliation:
Microelectronics Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara-shi, Kanagawa-ken 229, Japan.
Ken-Ichi OYAMA
Affiliation:
Microelectronics Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara-shi, Kanagawa-ken 229, Japan.
Tadayoshi ENOMOTO
Affiliation:
Microelectronics Research Laboratories, NEC Corp., 1120, Shimokuzawa, Sagamihara-shi, Kanagawa-ken 229, Japan.
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Abstract

The surface morphology of SOI has been studied. The surface is very wavy and contains protrusions. Crystal orientations for SOI without protrusions were close to (100), while those for SOI with protrusions were close to either (111) or (101). The angle of orientation rotation for SOI without protrusions was less than 5 degrees over a 600um long SOI stripe, while the angle of SOI with protrusions was about 30 degrees. Threshold voltages of pMOSFET with protrusions in the channel were generally larger than those without protrusions in the channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 409
Copyright
Copyright © Materials Research Society 1988

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References

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