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Influence of The Growth Temperature on The Presence of Composition Inhomogeneities in In0.52Al0.48As Layers Grown by MBE on InP Substrates

Published online by Cambridge University Press:  25 February 2011

F. Peiro ,
A. Cornet ,
A. Hierms ,
J.R. Morante ,
A. Georgakilas  and
G. Halkias
F. Peiro
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain. Serveis Científico-Tècnics. Univ. Barcelona Lluís Solé i Sabarís, 1-3. 08028 Barcelona, Spain.
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain.
A. Hierms
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain.
J.R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. Univ. Barcelona. Diagonal 645-647. 08028 Barcelona, Spain.
A. Georgakilas
Affiliation:
Univ. Maryland, CALCE Elect. Pack. Res. Cent. College Park MD 20742, USA.
G. Halkias
Affiliation:
FORTH. I.E.S.L. P.O. BOX 1527, Heraklion, Crete.
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Abstract

By using Transmission Electron Microscopy we have studied the presence of composition inhomogeneities in In0.52Al0.48As layers grown on (100) InP. We have found a critical temperature equal to 550°C above which composition inhomogeneities start to appear nonuniformly distributed over the sample area. However, as the growth temperature increases they cover the whole layer. Furtermore, the density of stacking faults and threading dislocations increases for growth temperatures beyond the optimum value of 530°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 101
Copyright
Copyright © Materials Research Society 1992

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References

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