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Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide

Published online by Cambridge University Press:  25 February 2011

Xiaoli Xu ,
R. T. Kuehn ,
J. M. Melzak ,
G. A. Hames ,
J. J. Wortman ,
M. C. Öztürk ,
R. J. Nemanich ,
G. Harris  and
D. Maher
Xiaoli Xu
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
R. T. Kuehn
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
J. M. Melzak
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
G. A. Hames
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
J. J. Wortman
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
M. C. Öztürk
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
G. Harris
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
D. Maher
Affiliation:
Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Various surface pre-cleaning processes for rapid thermal in-situ polysilicon/oxide/silicon stacked gate formation have been evaluated. MOS capacitors have been fabricated to assess the effects of surface pre-cleaning on the quality of both Rapid Thermal Oxide (RTO) and Rapid Thermal Chemical Vapor Deposition (RTCVD) oxide. Measurement results have shown that, 1) High temperature (≥ 900 °C) rapid thermal cleaning in Ar, H2 or high vacuum (10−8 Torr) ambients can lead to MOS gates with high leakage current if RTO is used to form the gate oxide, 2) The standard Huang clean and ultra-violet ozone (UV/O3) treatments can improve the film quality for both deposited and thermally grown oxide, and 3) Compared with RTO, the breakdown field of the RTCVD oxide is less dependent on the surface pre-cleaning treatment. These results indicate that silicon wafer surface cleaning techniques typically used for silicon epitaxial processes are not necessarily applicable to oxide film formation in RTP reactors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 81
Copyright
Copyright © Materials Research Society 1992

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References

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