Skip to main content Accessibility help
×
Home

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

  • H.R. Moutinho (a1), C.-S. Jiang (a1), B. Nelson (a1), Y. Xu (a1), J. Perkins (a1), B. To (a1), K.M. Jones (a1), M.J. Romero (a1) and M.M. Al-Jassim (a1)...

Abstract

We have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Copyright

References

Hide All
1. Kleider, J.P., Longeaud, C., Bruggemann, R., and Houze, F., Thin Solid Films 383, 57 (2001).
2. Puigdollers, J., Cifre, J., Polo, M.C., Asensi, J.M., Tertomeu, J., Andreu, J., and Lloret, A., Appl. Surf. Sci. 86, 600 (1995).
3. Saha, S.C., Rath, J.K., Kshirsagar, S.T., and Ray, S., J. Phys. D: Appl. Phys. 30, 2686 (1997).
4. Hamakawa, Y. and Takakura, H., Proc. Twenty-Eighth IEEE Photov. Spec. Conf., 766 (Anchorage, 2000).
5. Konagai, M., Tsushima, T., Ide, Y., Asakusa, K., Jujisaki, T., Kim, M.K., Wakita, Y., and Yamada, A., Proc. Twenty-Eighth IEEE Photov. Spec. Conf., 788 (Anchorage, 2000).
6. Moutinho, H.R., Jiang, C.-S., Perkins, J., Xu, Y., Nelson, B.P., Jones, K.M., Romero, M.J., and Al-Jassim, M.M., Thin Solid Films (2003) (in press).
7. Zhou, J.-H., Ikuta, K., Yasuda, T., Umeda, T., Yamasaki, S., and Tanaka, K., Appl. Phys. Lett. 71, 1534 (1997).
8. Moutinho, H.R., Romero, M.J., Jiang, C.-S., Xu, Y., Nelson, B.P., Jones, K.M., Mahan, A.H., and Al-Jassim, M.M., Proc. Twenty-Ninth IEEE Photov. Spec. Conf. (New Orleans, 2002) (in press).

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

  • H.R. Moutinho (a1), C.-S. Jiang (a1), B. Nelson (a1), Y. Xu (a1), J. Perkins (a1), B. To (a1), K.M. Jones (a1), M.J. Romero (a1) and M.M. Al-Jassim (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed