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Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires


The influence of Si-doping on the growth and material characteristics of InAs nanowires deposited by metal-organic vapor phase epitaxy (MOVPE) was investigated. It was observed that above a certain partial pressure ratio, doping has an influence on the morphology. The nanowires exhibit better uniformity but lower height vs. diameter aspect ratio as the supply of the dopant increases. It was consistantly found that the specific conductance of the nanowires also increases. Moreover the electrical measurements showed a transition from semiconducting to metallic behavior in the case of highly doped nanowires.



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[1] Bryllert, T., Wernersson, L.-E., Fröberg, L. E., Samuelson, L., IEEE Elec. Dev. Lett. 27, 323 (2006).10.1109/LED.2006.873371
[2] Dayeh, S. A., Aplin, D. P. R., Zhou, X., Yu, P. K. L., Yu, E. T., Wang, D., Small 3, 326 (2007).10.1002/smll.200600379
[3] Fasth, C., Fuhrer, A., Bjork, M. T., Samuelson, L., Nanoletters 5, 14871490 (2005).10.1021/nl050850i
[4] Pfund, A., Shorubalko, I., Leturcq, R., Ensslin, K., Appl. Phys. Lett., AIP, 89, 252106 (2006).
[5] Ford, A. C., Ho, J. C., Chueh, Y.-L., Tseng, Y.-C., Fan, Z., Guo, J., Bokor, J. and Javey, A., Nano Letters, 9, 360365 (2009)10.1021/nl803154m
6] Hansen, A. E., Björk, M. T., Fasth, C., Thelander, C., Samuelson, L., Phys. Rev. B71, 205328 (2005) 205328.10.1103/PhysRevB.71.205328
[7] Hiruma, K., Yazawa, M., Katsuyama, T., Ogawa, K., Haraguchi, K., Koguchi, M., Kakibayashi, H., J. Appl. Phys. 77, 447 (1995).10.1063/1.359026
[8] Dick, K. A., Deppert, K., Mårtensson, T., Mandl, B., Samuelson, L., Seifert, W., Nano Lett. 5, 761 (2005).10.1021/nl050301c
[9] Tomioka, K., Motohisa, J., Hara, S., Fukui, T., Jpn. J. Appl. Phys. 46, L1102 (2007).10.1143/JJAP.46.L1102
[10] Paetzelt, H., Gottschalch, V., Bauer, J., Benndorf, G., Wagner, G., J. Cryst. Growth 310, 5093 (2008).10.1016/j.jcrysgro.2008.06.065
[11] Tomioka, K., Mohan, P., Noborisaka, J., Hara, S., Motohisa, J., Fukui, T., J. Cryst. Growth 298, 644 (2007).10.1016/j.jcrysgro.2006.10.183
[12] Sladek, K., Klinger, V., Wensorra, J., Akabori, M., Hardtdegen, H. and Grützmacher, D., J. Cryst. Growth 312, 635 (2010) 2010).
[13] Akabori, M., Sladek, K., Hardtdegen, H., Schäpers, T. and Grützmacher, D., J. Cryst. Growth, 311, 3813 (2009).
[14] Dayeh, S. A., Semiconductor Science and Technology 25, 024004 (2010).10.1088/0268-1242/25/2/024004


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Influence of Silicon Doping on the SA-MOVPE of InAs Nanowires


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