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Influence of Precursor Chemistry on Synthesis of Silicon-Carbon-Germanium Alloys

Published online by Cambridge University Press:  15 February 2011

Michael Todd ,
John Kouvetakis ,
Phillip Matsunaga ,
D. Chandrasekhar  and
David Smith
Michael Todd
Affiliation:
Department of Chemistry and Biochemistry Arizona State University, Tempe, Arizona 85287–1604
John Kouvetakis
Affiliation:
Department of Chemistry and Biochemistry Arizona State University, Tempe, Arizona 85287–1604
Phillip Matsunaga
Affiliation:
Department of Chemistry and Biochemistry Arizona State University, Tempe, Arizona 85287–1604
D. Chandrasekhar
Affiliation:
Center for Solid State Science, Arizona State University, Tempe Arizona 85287–1704
David Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe Arizona 85287–1704
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Abstract

We describe the synthesis and use of the novel molecular precursors C (SiH3) 4, CH3GeH3and SiH3GeH3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with S1H4 and GeH4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si1-x-y. GexCy (y=0.04–0.06) alloys with C (SiH3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2–14 at.% with CH3GeH3; (3) mixtures of diamond cubic nanocrystals (Ge, Si1-xGex) and amorphous SiC with SiH3CH2GeH3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 529
Copyright
Copyright © Materials Research Society 1995

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References

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