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Influence of potential barrier materials on device performance

Published online by Cambridge University Press:  01 February 2011

Z. Y. Xie
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
Y. Q. Li
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
T. C. Wong
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
F. L. Wong
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
M. K. Fung
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
S. T Lee
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
L. S. Hung
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) & Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
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Abstract

An organic light-emitting device (OLED) having a double-heterostructure of ITO/NPB/DCMdoped Alq3/BCP/Alq3/MgAg was constructed to form a narrow recombination zone where both charge carriers and excitons are confined, thus resulting in efficient electron-hole recombination and energy transfer. It was found that though luminance efficiency was enhanced, the low electron mobility of BCP resulted in higher driving voltages and limited the improvement of power efficiency. Significant improvements on both quantum efficiency and power efficiency were achieved by replace 1,3,5-tri(phenyl-2-benzimidazoly)-benzene (TPBI) for BCP, and were correlated with its high electron mobility. Device performance was further improved in the structure ITO/NPB/DCM-doped Alq3/TPBI/LiF/MgAg with a maximum luminance efficiency 6.03cd/A and a power efficiency of 5.94 lm/W.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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