Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-19T16:51:03.003Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Post-annealing Temperature on the Properties of Ti-Doped In2O3 Transparent Conductive Films by DC Ratio-frequency Sputtering

Published online by Cambridge University Press:  01 June 2011

Lei Li ,
Chen Chen ,
Chengjun Dong ,
JiaJia Cao ,
Jingmin Dang  and
Yiding Wang
Lei Li
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
Chen Chen
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
Chengjun Dong
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
JiaJia Cao
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
Jingmin Dang
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
Yiding Wang
Affiliation:
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, Jilin, P.R. China
Get access

Abstract

In this paper, titanium doped (2 wt. %) indium oxide (TIO) thin films deposited on quartz substrates by DC sputtering were presented. Dealt with different temperatures from 420°C to 620°C of post-annealing in vacuum for 40 minuets, the samples display different optical and electric properties. The deposited films exhibited polycrystalline in the preferred (222) and (440) orientation, with higher mobility (up to 48.6 cm2/VS) and lower resistivity (1.26 ×10-4Ω·cm) at the post-annealing temperature of 520°C. The average optical transmittance of the films is over 92% in a wavelength range from 300 to 1100 nm and the transmittance has only around 1.8% change with different post-annealing temperatures.

Keywords

optoelectronicthin filmTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1352: Symposium GG – Titanium Dioxide Nanomaterials , 2011 , mrss11-1352-gg05-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Koida, T., kondo, M., J.Appl.Phys. 101 (2007)063713.Google Scholar
[2] Yang, M., Feng, J., Li, G., Zhang, Q., J. Crystal Growth 310(2008) 3474 Google Scholar
[3] Gupta, R.K., Ghosh, K., Mishra, S.R., Kahol, P.K., Appl. Surf. Sci. 253 (2007) 9422.Google Scholar
[4] Gupta, R.K., Ghosh, K., Mishra, S.R., Kahol, P.K., Mater.Lett. 62 (2008) 1033.Google Scholar
[5] Hest, H.F.A.M., Dabney, M.S., Perkins, J.D., Ginley, D.S., Taylor, M.P., Appl. Phys. Lett. 87 (2005) 032111.Google Scholar
[6] Fang, Z.B., Yan, Z.J., Tan, Y.S., Liu, X.Q., Wang, Y.Y., Appl. Surf. Sci. 241 (2005) 303.Google Scholar
[7] Zhao, Z., Morel, D. L., Ferekides, C. S., The Solid Films 413(2002) 203.Google Scholar
[8] Frank, G., Kostlin, H., Appl. Phys. Lett. A: Solids Surf. 27(1982) 197.Google Scholar