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Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO2-x Films

  • Ken Suzuki (a1), Yuta Ito (a1), Hideo Miura (a1) and Tetsuo Shoji (a1)

Abstract

We performed a quantum chemical molecular dynamics analysis for SiO2-x structure under strain to make clear the effect of the strain and intrinsic defects on both electronic and structural characteristics of SiO2-x. The SiO2-x showed a large change of the structure during the simulation. This is mainly because that the Si-O bonds near an oxygen vacancy were broken and a free silicon monoxide molecule was generated in the SiO2-x structure. The magnitude of the band gap of the SiO2-x decreased drastically due to the formation of the free monoxide. In addition, the band gap decreased further under large tensile strain of about 10%. We can conclude therefore, that both the existence of oxygen vacancies and tensile strain in SiO2-x films deteriorate the electronic reliability of the oxide film seriously.

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1 Maserjian, J. and Zamani, N., J. Vac. Sci. Technol. 20, 743 (1982).
1 Olivo, P., Nguyen, T., and Ricco, B., IEEE Trans. Electron Devices, ED-35, 2259 (1988).
3 Miura, H. and Ikeda, S., IEICE Trans. on Electronics, E82-C, No. 6, 830 (1999).
4 Moriya, H., Iwasaki, T., and Miura, H., Ext. Abs. of the 2002 Int. Conf. on Solid State Devices and Materials, 186 (2002).
5 Yamada, A., Endou, A., Takabe, H., Teraishi, K., Ammal, S. S. C., Kubo, M., Nakamura, K. G., Kitajima, M., and Miyamoto, A., Jpn, J. Appl. Phys. 38, 2434 (1999).
6 Suzuki, K., Kuroiwa, Y., Takami, S., Kubo, M., Miyamoto, A., and Imamura, A., Solid State Ionics, 152-153, 273 (2002).
7 Elanany, M., Selvam, P., Yokosuka, T., Takami, S., Kubo, M., Imamura, A., and Miyamoto, A., J. Phys. Chem. B, 107, 1518 (2003).
8 Suzuki, K., Takeda, Y., Lu, Z., and Shoji, T., Proceeding of International Congress on Advances in Nuclear Power Plants, CD-ROM, Paper No. 4227 (2004).
9 Verlet, L., Phys. Rev. 159, 98103 (1967).
10 Ewald, P. P., Ann. Phys. 64, 253 (1921).
11 Miura, R., Yamano, H., Yamauchi, R., Katagiri, M., Kubo, M., Vetrivel, R., and Miyamoto, A., Catalysis Today, 23, 409 (1995).

Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO2-x Films

  • Ken Suzuki (a1), Yuta Ito (a1), Hideo Miura (a1) and Tetsuo Shoji (a1)

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