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Influence of Mis-Orientation of C-plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films

Published online by Cambridge University Press:  01 February 2011

Seong-woo Kim ,
Hideo Aida  and
Toshimasa Suzuki
Seong-woo Kim
Affiliation:
Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Saitama, 345–8501, Japan
Hideo Aida
Affiliation:
Namiki Precision Jewel Co., Ltd., 3–8–22 Shinden, Adachi-ku, Tokyo, 123–8511, Japan
Toshimasa Suzuki
Affiliation:
Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Saitama, 345–8501, Japan
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Abstract

We have studied the early stages of GaN growth to realize the growth mechanism of GaN thin films on mis-oriented sapphire substrates which affects the surface and crystal quality of GaN thin films. As the result, it was found that the larger mis-orientation angle helps the growth of the larger grain of GaN and leads to the earlier shift of growth mode from 3D to 2D. The AFM observation of closed-coalesced GaN thin films revealed the difference in the micro-step structures by the mis-orientation angle of sapphire substrate. The result of x-ray rocking curve as a function of mis-orientation angle well matched with the microstructure of GaN surface, indicating that the larger mis-orientation angle helps the column ordering of GaN crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.40
Copyright
Copyright © Materials Research Society 2005

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References

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