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Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

Published online by Cambridge University Press:  11 February 2011

O. Gelhausen ,
M. R. Phillips ,
H. N. Klein  and
E. M. Goldys
O. Gelhausen
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
H. N. Klein
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
E. M. Goldys
Affiliation:
Division of Information and Communication Sciences, Macquarie University, North Ryde, NSW 2109, Australia
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Abstract

CL spectroscopy studies at varying temperatures and excitation power densities as well as depth-resolved CL imaging were conducted to investigate the impact of low energy electron beam irradiation (LEEBI) on native defects and residual impurities in metal-organic vapor phase epitaxy (MOVPE) grown Mg-doped p-type GaN. Due to the dissociation of (Mg-H)0 complexes, LEEBI significantly increases the (e,Mg0) emission (3.26 eV) at 300 K and substantially decreases the H-Mg donor-acceptor-pair (DAP) emission (3.27 eV) at 80 K. In-plane and depth-resolved CL imaging indicates that hydrogen dissociation results from electron-hole recombination at H-defect complexes rather than heating by the electron beam. The dissociated hydrogen atoms associate with nitrogen vacancies, forming a deeper donor, i.e. a (H-VN) complex. The corresponding deeper DAP emission with Mg centered at 3.1 eV is clearly observed between 160 and 220 K. Moreover, a broad yellow luminescence (YL) band centered at 2.2 eV is observed in MOVPE-grown Mg-doped GaN after LEEBI-treatment. It is suggested that a combination of LEEBI-induced Fermi-level downshift due to Mg-acceptor activation and simultaneous dissociation of gallium vacancy-impurity complexes, i.e. (VGa-H), is responsible for the observed YL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M10.7
Copyright
Copyright © Materials Research Society 2003

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References

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