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Influence of Ion Energy in Plasma Deposition of a-Sio2 Films

  • L. Vallier (a1), O. Joubert (a1), R. Burke (a1), F. Ferrieu (a2) and R. A. B. Devine (a2)...

Abstract

Silicon dioxide films have been deposited using a microwave plasma of (SiH4 + O2) excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was (O2: SiH4) = 7 and no intentional substrate heating was used. The effect of ion energy during deposition, in the 10 — 150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate and electrical measurements. It is found that for an ion energy > 50 eV, many of the film characteristics are close to those of thermal SiO2.

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Influence of Ion Energy in Plasma Deposition of a-Sio2 Films

  • L. Vallier (a1), O. Joubert (a1), R. Burke (a1), F. Ferrieu (a2) and R. A. B. Devine (a2)...

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