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Influence of Interfacial Copper on the Ti-SiO2 Reaction During Nitridation of Cu-Ti Films

Published online by Cambridge University Press:  21 February 2011

Daniel Adams ,
T.L. Alford ,
N.D. Theodore ,
T. Laursen ,
S.W. Russell  and
M.J. Kim
Daniel Adams
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287–6006
T.L. Alford
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287–6006
N.D. Theodore
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287–6006
T. Laursen
Affiliation:
Arizona State University, Center for Solid State Science, Tempe, AZ 85287-1704
S.W. Russell
Affiliation:
Arizona State University, Department of Chemical, Bio and Materials Engineering, Tempe, AZ 85287–6006
M.J. Kim
Affiliation:
Arizona State University, Center for Solid State Science, Tempe, AZ 85287-1704
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Abstract

Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO2 and annealed in an NH3 ambient at temperatures 400–700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO2 interface. At the surface Ti reacted with NH3 to form TiN, whereas at the interface the Ti reacted with the SiO2 to form a TiO/Ti5Si3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the Si02 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu2O component has a catalytic effect on the Ti- SiO2 reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 631
Copyright
Copyright © Materials Research Society 1998

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References

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