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Influence of Interface Disorder on the Raman Response of {113}-Oriented Superlattices

Published online by Cambridge University Press:  21 February 2011

Pedro Castrillo ,
Luciano Colombo  and
Gaspar Armelles
Pedro Castrillo
Affiliation:
Sezione di Fisica dei Solidi e Nuovi Materiali, Université degli studi di Milano, via Celoria 16, 20133 Milano, Italy Centro Nacional de MicroelectrÓnica, Consejo Superior de Investigaciones Cientfficas, Serrano 144, 28006 Madrid, Spain
Luciano Colombo
Affiliation:
Sezione di Fisica dei Solidi e Nuovi Materiali, Université degli studi di Milano, via Celoria 16, 20133 Milano, Italy
Gaspar Armelles
Affiliation:
Centro Nacional de MicroelectrÓnica, Consejo Superior de Investigaciones Cientfficas, Serrano 144, 28006 Madrid, Spain
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Abstract

We have studied the effect of interface cationic intermixing on the Raman scattering by optical phonons in {113}-oriented superlattices. The theoretical Raman spectra have been calculated using the Bond Charge Model (for lattice dynamics) and the Bond Polarizability Model (for the Raman intensities). We have compared the theoretical results with our experimental data in the spectral range of GaAs-like optical modes. Finally, we have studied the differences between the effect of interface disorder and the effect of the periodic interface corrugation proposed in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 199
Copyright
Copyright © Materials Research Society 1994

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