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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

Published online by Cambridge University Press:  11 February 2011

Z. Y. Zhang ,
Ch. M. Li ,
P. Jin ,
X. Q. Meng ,
B. Xu ,
X. L. Ye  and
Z. G. Wang
Z. Y. Zhang
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
Ch. M. Li
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
P. Jin
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
X. Q. Meng
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
B. Xu
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
X. L. Ye
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
Z. G. Wang
Affiliation:
Key laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of, China
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Abstract

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E13.3
Copyright
Copyright © Materials Research Society 2003

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References

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