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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

  • Z. Y. Zhang (a1), Ch. M. Li (a1), P. Jin (a1), X. Q. Meng (a1), B. Xu (a1), X. L. Ye (a1) and Z. G. Wang (a1)...


We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.



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