Skip to main content Accessibility help
×
Home

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

  • Fei Chen (a1), A. N. Cartwright (a1), Paul M. Sweeney (a1), M. C. Cheung (a1), Jeffrey S. Flynn (a2) and David Keogh (a2)...

Abstract

A comparative study, using time-resolved and CW photoluminescence spectroscopy, of MOVPE grown InGaN/GaN multiple quantum wells deposited on HVPE GaN/Sapphire at different growth temperatures was undertaken. It was found that the PL linewidth increased and the peak emission energy decreased as the growth temperature was reduced. Moreover, the sample grown at an intermediate growth temperature exhibited total integrated luminescence intensity much greater than the samples grown at higher or lower growth temperatures. A phenomenological carrier recombination dynamics model based on the competition of quantum well-like radative recombination, spatially localized radiative recombination in potential minima and non-radiative recombination through defects is presented to provide an explanation of the observed emission dynamics and efficiency. In this model, the emission efficiency is determined by the relative area of defects and the number density of localized states in the potential minima, both of which are influenced by the growth temperature. Furthermore, the photon energy dependent lifetimes are well fitted with this model by assuming a Gaussian shape localized states distribution. The localized potential minima are consistent with nanoscale indium rich regions due to indium aggregation.

Copyright

References

Hide All
1. Ho, I. H. and Stringfellow, G. B., Appl. Phys. Lett. 69, 2701 (1996).
2. Chichibu, S., Wada, K., and Nakamura, S., Appl. Phys. Lett. 71, 2346 (1997).
3. El-masry, N. A., Piner, E. L., Liu, S. X., and Bedair, S. M., Appl. Phys. Lett. 72, 40 (1998).
4. McCluskey, M. D., Romano, L. T., krusor, B. S., Bour, D. P., Johnson, N. M., and Brennan, S., Appl. Phys. Lett. 72, 1730 (1998).
5. Nakamura, S., Solid State Commun. 102, 237 (1997).
6. Tran, C. et al., J. Cryst, Growth 195, 397 (1998).
7. O'Donnell, K. P., Martin, R. W., and Middleton, P. G., Phys. Rev. Lett. 82, 237 (1999).
8. Shapiro, N. A., Perlin, P., Kisielowski, C., Mattos, L. S., Yang, J. W., and Weber, E. R., MRS Internet J. Nitride Semicond. Res. 5, 1 (2000).
9. Chichibu, S., Sota, T., Wada, K., and Nakamura, S., J. Vac. Sci. Technol. B 16, 2204 (1998)
10. Gourdon, C. and Lavallard, P., Phys. Stat. Sol. B 153, 641 (1989).
11. Eliseev, P. G., Perlin, P., Lee, J., and Osinski, M., Appl. Phys. Lett. 71, 569 (1997).
12. Hirayama, H., Tanaka, S., Ramvall, P., and Aoyagi, Y., Appl. Phys. Lett. 72, 1736 (1998)
13. Tachibana, K., Someya, T., and Arakawa, Y., Appl. Phys. Lett. 74, 383 (1999)

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

  • Fei Chen (a1), A. N. Cartwright (a1), Paul M. Sweeney (a1), M. C. Cheung (a1), Jeffrey S. Flynn (a2) and David Keogh (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed