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The Influence of Facility Conditions on A ±0.25 °C Repeatability Lamp Voltage Controlled RTP System

Published online by Cambridge University Press:  10 February 2011

Peter Vandenabeele  and
Wayne Renken
Peter Vandenabeele
Affiliation:
SensArray Corporation, Bouwelsesteenweg 203A, 2560 Nijlen, BELGIUM, P.Vandenabeele@ping.be
Wayne Renken
Affiliation:
SensArray Corporation, 3410 Garrett Drive, Santa Clara, CA 95054, Wayne_Renken@sensarray.com
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Abstract

The influence of cooling air and cooling water parameters on the wafer temperature was studied in an RTP system with lamp power control. With a cool down time of 150 seconds between consecutive heating cycles, the wafer temperature in a 1050 °C process was highly sensitive to cooling air flow. With a cool down time of 330 seconds the sensitivity dropped a factor of 5. This was explained through the effect of radiative heat transfer from the quartz to the wafer at higher quartz temperatures (>200 °C). Other factors are variations in the water flow through the oven walls and the repeatability of wafer positioning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 181
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Vandenabeele, Peter and Renken, Wayne, MRS San Francisco, April 1997, this volume.Google Scholar
[2] Nakos, James, RTP'93, Fair, R. B., Lojek, B., Editors, 421 (1993).Google Scholar