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Influence of Electrochemical Plating Process Parameters on Corrosion of Cu Damascene Interconnects

Published online by Cambridge University Press:  15 March 2011

D. Ernur ,
W. Wu ,
S. H. Brongersma ,
V. Terzieva  and
K. Maex
D. Ernur
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium K. U. Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
W. Wu
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium K. U. Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
S. H. Brongersma
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. Terzieva
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium K. U. Leuven, ESAT, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
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Abstract

We present the influence of the electrochemical plating recipe and the bath chemistry on Cu grain size evolution and its link to corrosion of Cu interconnects. Our results demonstrate the fact that Cu corrosion depends on the combination of (i) solution type and (ii) Cu quality. The latter is influenced by geometrical factors such as line width and pattern density as well as the electroplating parameters such as plating recipe and bath chemistry. Organic and inorganic acid based model-CMP solutions are used to make a comparison in terms of the interactions with the Cu surface. It is shown that an organic acid based solution etches Cu independent of the Cu quality. However, etching by an inorganic acid based solution reveals line width (0.2 μm <w<1.0 μm) and pattern density dependence (16%< pd< 72 %) with the narrow lines being etched more rapidly both for isolated and semi-dense structures. This kind of geometry dependent etch behavior by the inorganic acid based solution is also shown to be a function of the electroplating process parameters in contrast to an organic acid based one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K6.1
Copyright
Copyright © Materials Research Society 2004

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References

1) Kondo, S., Sakuma, N., Homma, Y. and Ohashi, N., Jpn. J. Appl. Phys. 39 (2000) p. 6216.Google Scholar
2) Homma, Y., Kondo, S., Sakuma, N., Hinode, K., Noguchi, J., Ogashi, N., Yamaguchi, H. and Owada, N., J. Electrochem. Soc. 147 (3) (2000) p.1193.Google Scholar
3) Ernur, D., Kondo, S., Shamiryan, D. and Maex, K., Microelectronic Engineering, 64 (2002) page : 117.Google Scholar
4) Ernur, D., Schuhmacher, J., Terzieva, V., Shamiryan, D. and Maex, K., Advanced Metallization Conference Proceedings, 2002, page : 95 Google Scholar
5) Ernur, D., Kondo, S. and Maex, K., Jpn. J. Appl. Phys, 41 (12) (2002)Google Scholar
6) Luo, Y., du, T. and Desai, V., Mat. Res. Soc. Symp. Proc., 767 (2003), F6.10.1 Google Scholar
7) Wang, L. and Doyle, F. M., Mat. Res. Soc. Symp. Proc., 767 (2003), F6.5.1 Google Scholar
8) Huot, A., Fischer, A. H., Glasow, A. von and Schwarzer, R. A., AIP Conference Proceedings, 491, (1999) p. 261.Google Scholar
9) Vanasupa, L., Pinck, D., Joo, Y-C., Nogami, T., Pramanick, S., Lopatin, S. and Yang, K., Electrochemical and Solid-State Lett., 2 (6), (1999), P. 275 Google Scholar
10) Besser, P. R., Zschech, E., Blum, W., Winter, D., Ortega, R., Rose, S., Herrick, M., Gall, M., Thrasher, S., Tiner, M., Baker, B., Braeckelmann, G., Zhao, L., Simpson, C., Capasso, C., Kawasaki, H. and Weitzman, E., J. Elec. Mat., 30 (4) (2001) p. 320 Google Scholar
11) Riege, S. P. and Thompson, C. V., Scripta Materialia, 41 (4), (1999) p. 403 Google Scholar
12) Steigerwald, J. M., Murarka, S. P., Gutmann, R. J. and Duquette, D. J., Mat. Chem. And Phys., 41 (1995), p. 217.Google Scholar
13) Besser, P. R., Zschech, E., Blum, W., Winter, D., Ortega, R., Rose, S., Herrick, M., Gall, M., Thrasher, S., Tiner, M., Baker, B., Braeckelmann, G., Zhao, L., Simpson, C., Capasso, C., Kawasaki, H. and Weitzman, E., J. Elec. Mat., 30 (4) (2001) p. 320 Google Scholar
14) Peterson, M. L., Small, R. J., Truong, T. and Lee, J-Y., Semiconductor Fabtech, 11th Edition, p. 283 Google Scholar
15) Dubin, V. M., Morales, G., Ryu, C. and Wong, S. S., Mat. Res. Soc. Symp. Proc., 505 (1998), p. 137 Google Scholar
16) Ernur, D., Carbonell, l. and Maex, K., MRS 2003 Spring Meeting, Symposium Z, Online ProceedingsGoogle Scholar
17) Takahashi, K. M. and Gross, M. E., J. Electrochem. Soc., 146 (12), (1999), p. 4499.Google Scholar