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Influence of design parameters on dark current of vertically integrated a-Si:H diodes.

  • C. Miazza (a1), N. Wyrsch (a1), G. Choong (a1), S. Dunand (a1), C. Ballif (a1), A. Shah (a1), N. Blanc (a2), F. Lustenberger (a2), R. Kaufmann (a2), M. Despeisse (a3) and P. Jarron (a3)...

Abstract

Image and particle sensors based on thin film on CMOS (TFC) technology, where a-Si:H detectors are vertically integrated on top of a CMOS chip, basically provide high sensitivity and low dark current densities (Jdark). However, as shown in previous work and as confirmed by the actual measurements, Jdark values depend on the topology of the chip and on the detector structure used.

The present paper describes a systematic study carried out, both with test structures on glass and also with a dedicated CMOS test chip designed by CERN. The increase in Jdark is shown to be related to border effects, and especially on the detailed structure of the pixel periphery. In all cases, lower Jdark are obtained when one uses metal-i-p instead of n-i-p configuration detectors. Transferring these results to the standard TFC sensors used by them, the authors have obtained values of Jdark as low as 20 pA/cm2 at -1 V reverse bias.

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Influence of design parameters on dark current of vertically integrated a-Si:H diodes.

  • C. Miazza (a1), N. Wyrsch (a1), G. Choong (a1), S. Dunand (a1), C. Ballif (a1), A. Shah (a1), N. Blanc (a2), F. Lustenberger (a2), R. Kaufmann (a2), M. Despeisse (a3) and P. Jarron (a3)...

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