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The Influence of Current Stressing on the Structure of Ag Contacts to GaAs

Published online by Cambridge University Press:  26 February 2011

Z. Liliental-Weber ,
A. Miret-Goutier ,
N. Newman ,
C. Jou ,
W.E. Spicer ,
J. Washburn  and
E.R. Weber
Z. Liliental-Weber
Affiliation:
Materials and Chemical Sciences Div., Lawrence Berkeley Laboratory, Berkeley, CA 94720 Department of Materials Science, University of California, Berkeley, CA 94720;
A. Miret-Goutier
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720; Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
N. Newman
Affiliation:
Materials and Chemical Sciences Div., Lawrence Berkeley Laboratory, Berkeley, CA 94720 Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
C. Jou
Affiliation:
Materials and Chemical Sciences Div., Lawrence Berkeley Laboratory, Berkeley, CA 94720
W.E. Spicer
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
J. Washburn
Affiliation:
Materials and Chemical Sciences Div., Lawrence Berkeley Laboratory, Berkeley, CA 94720 Department of Materials Science, University of California, Berkeley, CA 94720;
E.R. Weber
Affiliation:
Materials and Chemical Sciences Div., Lawrence Berkeley Laboratory, Berkeley, CA 94720 Department of Materials Science, University of California, Berkeley, CA 94720;
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Abstract

The stability of Ag Schottky contacts on GaAs after voltage and current stressing has been investigated. The barrier height and its stability against voltage and current stressing were found to depend on the diode fabrication method (metal deposition onto either air-exposed or ultrahigh vacuum cleaved (UHV) substrates). The barrier height of Ag diodes formed on air exposed surfaces is 0.96 eV, and a significant decrease of 70 meV was found upon exposure to voltage and current stressing. In contrast, the barrier height of Ag diode formed on UHV cleaved samples is 0.89 eV, and no significant change was found upon exposure to stressing. The structure of the contacts was studied by transmission electron microscopy. Ag deposited on UHV cleaved substrates shows an epitaxial relationship to GaAs and atomically flat interfaces. Exposure to air before the metal deposition led to nonuniform reactions and compound formation at the interface as compared to UHV samples. After current stressing, void formation and electromigration of Ag was observed in the air-exposed contacts. Ag contacts formed on UHV-cleaved GaAs (110) were stable during current stressing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 241
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. See J. Vac. Sci. Technol. B 4 (No. 4) (1986).Google Scholar
2.Ludeke, T. R., Chiang, T. C., and Miller, T., J. Vac. Sci. Technol. B1, 581(1983).Google Scholar
3.Newman, N., Chin, K. K., Petro, W. G., Kendelewicz, T., Williams, M. D., McCants, C. E., and Spicer, W. E., J. Vac. Sci. Technol. B5, 996 (1987).Google Scholar
4.McGlip, J. F., J. Mater. Res. 2, 516 (1987).Google Scholar
5.Miret, A., Newman, N., Weber, E. R., Liliental-Weber, Z., Washburn, J., and Spicer, W. E., Appl. Phys. Lett. (1988), acc. f. publ..Google Scholar
6.Lodge, E. A. and Cowley, J. M., Ultramicroscopy 13, 215 (1984).Google Scholar
7. ASTM Powder Diffraction Data File.Google Scholar