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The Influence of CuCl Treatment on the PL Spectra of CdTe Thin Film, Component of CdS/CdTe Heterojunctions

Published online by Cambridge University Press:  31 January 2011

Sergiu A Vatavu ,
Hehong Zhao ,
Iuliana M Caraman ,
Petru A Gasin ,
Don L Morel  and
Chris S Ferekides
Sergiu A Vatavu
Affiliation:
svatavu@usm.md, Moldova State University, Physics, Chisinau, Moldova
Hehong Zhao
Affiliation:
hzhao@mail.usf.edu, University of South Florida, Electrical Engineering, Tampa, Florida, United States
Iuliana M Caraman
Affiliation:
iucaraman@yahoo.ca, University of Bacau, Engineering, Bacau, Romania
Petru A Gasin
Affiliation:
gashin@usm.md, Moldova State University, Physics, Chisinau, Moldova
Don L Morel
Affiliation:
morel@eng.usf.edu, University of South Florida, Electrical Engineering, Tampa, Florida, United States
Chris S Ferekides
Affiliation:
ferekide@eng.usf.edu, University of South Florida, Electrical Engineering, Tampa, Florida, United States
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Abstract

Technology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.

Keywords

luminescencephotovoltaicII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M08-16
Copyright
Copyright © Materials Research Society 2009

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References

1. Gessert, T. Smith, S. Asher, S. Moriaty, T. Young, M. Johnston, S. Duba, A. Dehart, C. (Proc. 31st IEEE PVSC, 2005) pp. 291.Google Scholar
2. Erra, S. Shivakumar, C. Zhao, H. Barri, K. Morel, D. L. and Ferekides, C. S. Thin Solid Films 515, 5933(2007).Google Scholar
3. Spath, B. Lakus-Wollny, K., Fritsche, J. Ferekides, C. S. Klein, A. Jaegermann, W. Thin Solid Films 515, 6172(2007).Google Scholar
4. Vatavu, S. Zhao, H. Caraman, Iu. Gasin, P. Ferekides, C. Thin Solid Films 517, 2195(2009).Google Scholar
5. Ferekides, C. S. Marinskiy, D. Viswanathan, V. Tetali, B. Palekis, V. Selvaraj, P. Morel, D. L. Thin Solid Films 361–362, 520(2000).Google Scholar
6. Barri, K. Jayabal, M. Zhao, H. Morel, D. L. Asher, S. Pankow, J. W. Young, M. R. Ferekides, C. S. (Proc. 31st IEEE PVSC, 2005) pp. 287–290.Google Scholar
7. Vatavu, S. Zhao, H. Padma, V. Rudaraju, R. Morel, D. L. Gasin, P. Caraman, Iu. Ferekides, C. S. Thin Solid Films 515, 6107(2007).Google Scholar
8. Abrikosov, N. Kh. Bankina, V. F. Poretskaya, L. V. Skudnova, E. V. Chizhevskaya, C. N. “Poluprovodnikovye khal'koghenidy i splavy na ikh osnove” (Semiconductor chalchogenides and alloys based on them – in russian), (Nauka, 1975) pp.5–7.Google Scholar
9. Aliev, G. N. Koshchug, O. S. Seisyan, R. P. Tela, Fizika Tverdogo (The Physics of Solid State) 36, 373(1994).Google Scholar
10. Ferekides, C. S. Vatavu, S. unpublished PL results.Google Scholar
11. Mathew, X. et al. , Sol. Energy Mat. and Sol. Cells 70, 379(2001).Google Scholar
12. Marfaing, Y. Rev. Phys. Appl. 12, 211(1977).Google Scholar
13. Du, M.H. Takenaka, H. Singh, D. J. Appl. Phys. 104, 093521(2008).Google Scholar
14. Wei, S.H. Zhang, S. B. Phys. Rev. B 66, 155211(2002).Google Scholar
15. Wei, S.H. Zhang, S. B. Zunger, A. J. Appl. Phys. 87, 1304(2000).Google Scholar
16. Krustok, J. Valdna, V. Hjelt, K. Collan, H. J. Appl. Phys. 80, 1757(1996).Google Scholar
17. Williams, F. Phys. Stat. Sol. 25, 493(1968).Google Scholar
18. Zhang, L. J. L. F. Da Silva, Li, J. Yan, Y. Gessert, T. A. Wei, S.H. PRL 101, 155501(2008).Google Scholar
19. Vatavu, S. Zhao, H. ICaraman, u. Gasin, P. Morel, D. and Ferekides, C. Phys. Stat. Sol. C 1–4 (2009)/DOI 10.1002/pssc.200881208.Google Scholar
20. Krustok, J. Madasson, J. Hiie, J. Phys. Stat. Sol. A 165, 517(1998).Google Scholar