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Influence of Crystalline Structure on Performance of Thin Film Transistors

Published online by Cambridge University Press:  21 February 2011

G. K. Celler ,
K. K. Ng ,
L. E. Trimble  and
E. I. Povilonis
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
K. K. Ng
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
E. I. Povilonis
Affiliation:
AT&T Bell Laboratories, Murray Hill, N. J. 07974
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Abstract

We have developed a procedure to optimize electron mobility and leakage currents in MOSFETs fabricated in laser recrystallized polysilicon films on SiO2. A shaped laser beam was used to obtain grain boundaries aligned with the current flow in MOS transistors. To suppress grain boundary diffusion, rapid thermal annealing replaced all high temperature processing steps subsequent to source and drain implantation. By combining these two approaches, functional transistors as short as 1.5 μm were obtained, and also 2 μm-channel 19-stage ring oscillators with 115 psec/stage propagation delay.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 127
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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