Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-18T02:16:55.789Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of a TiN Cap Layer on a Titanium-S Alici de Process: Titanium vs Titanium Nitride/Titanium

Published online by Cambridge University Press:  25 February 2011

S. -L. Zhang ,
W. Kaplan ,
M. Östling ,
H. Norström  and
A. Lindberg
S. -L. Zhang
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista
W. Kaplan
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista
M. Östling
Affiliation:
Royal Institute of Technology-Electrum, Solid State Electronics, P.O. Box 1298, S-164 28 Kista, Sweden
H. Norström
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista
A. Lindberg
Affiliation:
Swedish Institute of Microelectronics, P.O. Box 1084, S-164 21 Kista
Get access

Extract

To minimize the bridging problem In the self-aligned titanium slllcide (SALICI DE) processes, a titanium nitride (TiN) cap has been suggested. The objective of this work was to study the impact of such a TiN cap layer on a Ti-based SALICI DE process. The slllcide formation was carried out by Rapid Thermal Annealing (RTA). The Ti-Si Interaction, the dopant loss during silicide formation, the contact resistance between the formed TiSi2 and SI substrates, the leakage current, and the lateral diffusion of SI atoms over the spacers of MOS devices were investigated with and without a TiN layer on top of Tl films. The dependence of these factors on the annealing temperature was also investigated. The results showed that: a) An increased dopant loss was a direct result of more silicide formation, due to a larger SI substrate consumption. This was observed both with and without TiN cap. b) The specific contact resistance increased with annealing temperature, regardless the TiN cap. c) Sheet resistance, specific contact resistance and leakage current were not sensitive to the selective etch procedure. And d) A lower yield for bridging test structures was found where a TiN cap was employed, Indicating that the TiN layer did not suppress the Si lateral diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 233
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 van denhove, L., Ph. D. thesis, Katholieke Universiteit Leuven/IMEC, 1988.Google Scholar
2 Kaplan, W., Zhang, S. -L., Norström, H., Östling, M., and Lindberg, A., Appl. Surf. Sci, 53, 338 (1991).Google Scholar
3 Bakli, M., Gbltz, G., Caranhac, S., and Bomchil, G., Appl. Surf. Sci, 53, 391 (1991).Google Scholar
4 Révész, P., Gyimesi, J., and Zsoldos, E., J. Appl Phys. 54, 1860 (1983).Google Scholar
5 Wittmer, M., Ting, C. -Y., and Tu, K. N., Thin Solid Films 104, 191 (1983).Google Scholar
6 Wittmer, M. and Tu, K. N., Phys. Rev. B 4, 2010 (1984).Google Scholar
7 Brat, T., Osburn, C. M., Finstad, T., Liu, J., and Ellington, B., J. Electrochem. Soc. 133, 1451 (1986).Google Scholar
8 Beyers, R., Coulman, D., and Merchant, P., J. Appl. Phys. 61, 5110 (1987).Google Scholar
9 Osburn, C. M., Brat, T., Sharma, D., Griffis, D., Corcoran, S., Lin, S., Chu, W. -K., and Parikh, N., J. Electrochem. Soc. 135, 1490 (1988).CrossRefGoogle Scholar
10 Kaplan, W., Zhang, S. -L., Norström, H., östling, M., and Lindberg, A., to be published.Google Scholar