Hostname: page-component-8448b6f56d-c47g7 Total loading time: 0 Render date: 2024-04-25T02:30:45.572Z Has data issue: false hasContentIssue false
  • English
  • Français

Incorporation of Hydrogen in SiO2 and Si3N4 Thin Films Deposited by ECR-CVD

Published online by Cambridge University Press:  26 February 2011

J. Brown ,
M. Boudreau ,
M. Boumerzoug ,
P. Mascher ,
T. E. Jackman ,
S. Y. Tong  and
H. Haugen
J. Brown
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
M. Boudreau
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
M. Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
T. E. Jackman
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7. Institute for Microstructural Sciences, NRCC, Ottawa, Ontario, Canada, K1A 0R6.
S. Y. Tong
Affiliation:
Accelerator Laboratory and the Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
H. Haugen
Affiliation:
Accelerator Laboratory and the Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
Get access

Abstract

Hydrogen incorporation in ECR-CVD silicon oxynitride films deposited using tris dimemylaminosilane (TDAS) as the silicon precursor was investigated. The as-deposited silicon dioxide films were shown to contain little hydrogen (<2%) as determined by both FTTR and nuclear reaction analysis (15N profiling). Films were obtained with high breakdown fields (>10 MV/cm) and low interface state densities (2×l011cm−2) on silicon without special surface preparation. Silicon nitride films were found to contain large hydrogen concentrations, both bonded and unbonded, which evolved from the film due to beam irradiation during 15N profiling. We were able to demonstrate that dilution of the nitrogen plasma with both hydrogen and argon was effective in avoiding problems of trace oxygen contamination and poor film adhesion, and reducing the hydrogen concentration in the nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1037
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Manabe, Y., Mitsuyu, T., J. Appl. Phys., 66, 2475, (1989).Google Scholar
2. Boudreau, M., Boumerzoug, M., Mascher, P., Jessop, P.E., Appl. Phys. Lett., 63, 3014, (1993).Google Scholar
3. Alpha Research Chemicals and Accessories, Johnson Matthey, P.O. Box 8247, Ward Hill, Ma, 01835 0747.Google Scholar
4. Tong, S.Y., Haugen, H.K., Boudreau, M.G., Boumerzoug, M., and Mascher, P., in: The Physics of Semiconductors, edited by Lockwood, D.J. (World Scientific, Singapore 1995), p. 2359.Google Scholar
5. Lanford, W.A. and Rand, M.J., J. Appl. Phys., 49, 2473, (1978).Google Scholar
6. Terman, L.M., Solid-State Elect., 5, 285, (1962).Google Scholar
7. Hrubein, L., Huran, J., Sandrik, R., Kobzev, A.P., Shirokov, D.M., Nuc. Instr. and Methods in Phys. Res. B, 85, 60, (1994).Google Scholar
8. Dzioba, S. and Rousina, R., J. Vac. Sci. Technol. B 12, 433, (1994).Google Scholar
9. Puff, W., Boumerzoug, M., Brown, J., Mascher, P., Macdonald, D., Simpson, P.J. and Balogh, A.G., Appl. Phys. A, (1995), in press.Google Scholar