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Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

Published online by Cambridge University Press:  10 February 2011

Masayuki Suzuki  and
Yoji Saito
Masayuki Suzuki
Affiliation:
Department of Electric Engineering and Electronics, Seikei University, Tokyo, Japanmasayuki@ee.seikei.ac.jp
Yoji Saito
Affiliation:
Department of Electric Engineering and Electronics, Seikei University, Tokyo, Japanyoji@ee.seikei.ac.jp
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Abstract

We tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 51
Copyright
Copyright © Materials Research Society 1999

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References

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