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Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

J. D. Mackenzie ,
C. R. Abernathy ,
S. J. Pearton ,
S. M. Donovan ,
U. Hömmerich ,
M. Thaik ,
X. Wu ,
F. Ren ,
R. G. Wilsons  and
J. M. Zavada
J. D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611.
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611.
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611.
S. M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611.
U. Hömmerich
Affiliation:
Department of Physics, Research Center for Optical Physics, Hampton University, Hampton, VA 23668
M. Thaik
Affiliation:
Department of Physics, Research Center for Optical Physics, Hampton University, Hampton, VA 23668
X. Wu
Affiliation:
Department of Physics, Research Center for Optical Physics, Hampton University, Hampton, VA 23668
F. Ren
Affiliation:
Lucent Technologies, Murray Hill, New Jersey 07974
R. G. Wilsons
Affiliation:
Hughes Research Laboratory, Malibu, California 90265
J. M. Zavada
Affiliation:
J.U.S. Army Research Office, Research Triangle Park, NC 27709
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Abstract

Metalorganic molecular beam epitaxy has been utilized to incorporate Er into AlGaN materials during growth utilizing elemental and metalorganic sources. Room temperature 1.54 μm photoluminescence was observed from AlN:Er and GaN:Er. Photoluminescence from AlN:Er doped during growth using the elemental source was several times more intense than that observed from implanted material. For the first time, strong room temperature 1.54 μm PL was observed in GaN:Er grown on Si. Temperature-dependent photoluminescence experiments indicated the 1.54 μm intensities were reduced to 60% and 40% for AlN:Er and GaN:Er, respectively, between 15 K and 300 K. The low volatility of Er(III) tris (2,2,6,6 - tetramethyl heptanedionate) and temperature limitations imposed by transport considerations limited maximum doping levels to ∼1017 cm-3 indicating that this precursor is unsuitable for UHV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 123
Copyright
Copyright © Materials Research Society 1997

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References

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