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Incoherent Focused Radiation for Activation of Implanted InP

Published online by Cambridge University Press:  15 February 2011

J.P. Lorenzo ,
D.E. Davies ,
K.J. Soda ,
T.G. Ryan  and
P.J. McNally
J.P. Lorenzo
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 1731
D.E. Davies
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 1731
K.J. Soda
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 1731
T.G. Ryan
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 1731
P.J. McNally
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 1731
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Abstract

InP layers implanted with Si+ ions are successfully activated through the use of a focused incoherent energy source. High mobility values and excellent carrier concentrations, both directly comparable to values attained using conventional furnace annealing, are achieved with this technique. Under optimized anneal conditions, electrical evaluation also indicates no surface anomalies such as those encountered with pulsed laser or electron beam annealed InP.

The annealing technique described here makes use of the output from two broad spectrum 1000 watt incandescent sources. Through the use of elliptical mirrors, a combined thermal image of these sources is formed as the output at a common focus. The sample is placed at this focus during the anneal cycle. Anneal time is controlled electronically and for these experiments is varied for 1 to 15 sec. Substrate temperature is measured with a low-mass thermocouple recorder readout system placed at the focus in contact with the sample. Annealing temperatures range from 750°C to 950°C. To prevent phosphorus loss and other surface anomalies, dielectric encapsulation and a solid phosphorus proximity source technique are examined. While the proximity technique has proven useful, PSG/Si02 double layered dielectric encapsulants appear to provide the most consistent results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 683
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Comsat Laboratories Clarksburg MD 20871

References

REFERENCES

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