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InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

  • W. Dobbelaere (a1), J. De Boeck (a1), W. De Raedt (a1), J. Vanhellemont (a1), G. Zou (a1), M. Van Hove (a1), B. Brijs (a1), R. Mertens (a1) and G. Borghs (a1)...

Abstract

InAs and InAs0.85Sb0.15p-“i”-n structures were grown on InAs, GaAs and Si substrates by Molecular Beam Epitaxy. The structural quality of the layers is discussed using Transmission Electron Microscopy and Rutherford Back Scattering. The influence of the material quality on the 77 K current-voltage measurements is explained. The spectral response of the devices was measured demonstrating peak responsivities of 2.1 A/W at 3.5μm wavelength for InAs0.85Sb0.15 detectors with a 4.3 μm cut-off wavelength.

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[4] Dobbelaere, W., Boeck, J. De and Borghs, G., Appl. Phys. Lett. 55(18), 18561858 (1989).
[5] Boeck, J. De, Dobbelaere, W., Hove, M. Van, Vanhellemont, J., Raedt, W. De, Vandervorst, W., Mertens, R. and borghs, G., Proceedings of MRS Spring Meeting Symposium V (Materials Research Symposium V (Materials Research Society, Pittsburgh, 1990), in press.
[6] Dobbelaere, W., Boeck, J. De, Mieghem, P. Van, Mertens, R. and Borghs, G., to be published in the Journal of Applied Physics, (February 1991).
[7] See e.g. Sun, Tai-Ping, Lee, Si-Chen and Yang, Sheng-Jenn, J. Appl. Phys. 67(11), 70927097 (1990).
[8] Dennis, P.N.J., Photodetectors, (Plenum Press, New York, 1986), p.22.

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InAsSb Photodiodes Grown on InAs, GaAs and Si Substrates by Molecular Beam Epitaxy

  • W. Dobbelaere (a1), J. De Boeck (a1), W. De Raedt (a1), J. Vanhellemont (a1), G. Zou (a1), M. Van Hove (a1), B. Brijs (a1), R. Mertens (a1) and G. Borghs (a1)...

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