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InAs and InGaAs Growth by Chloride Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

H. Shimawaki ,
Y. Kato  and
A. Usui
H. Shimawaki
Affiliation:
NEC Corp., Microelectronics Research Laboratories, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213, Japan
Y. Kato
Affiliation:
NEC Corp., Fundamental Research Laboratories, 34, Miyukigaka, Tsukuba, Ibaraki 305, Japan
A. Usui
Affiliation:
NEC Corp., Fundamental Research Laboratories, 34, Miyukigaka, Tsukuba, Ibaraki 305, Japan
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Abstract

InAs chloride ALE has been carried out in detail, resulting in successful InGaAs ALE on (111)B InP substrates. InAs growth of 0.9 ML/cycle is obtained for (111)B InAs substrates at temperatures below 375 °C, while growth rates for (100) and (111)A substrates steadily decrease with increases in growth temperature. The growth rates are independent of InCI pressure at 375 °C, suggesting a self-limiting growth factor in InAs chloride ALE. (GaAs)1(InAs)1 and (GaAs)2(InAs)2 superalloys can be prepared on (111)B InP substrates at 375 °C. Growth rates and crystal compositions for both layers agree well with the values expected for ideal superalloys. The presence of superlattice structures is indicated by X-ray diffraction measurement,

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 395
Copyright
Copyright © Materials Research Society 1990

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