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In Situ Xps Studies of the Deposition of Thin Films from Tetrakis(Dimethylamido)Titaniumorganometaluc Precursor for Diffusion Barriers

Published online by Cambridge University Press:  21 February 2011

G. Ruhl ,
R. Rehmet ,
M. Knoživá  and
S. Vepřek
G. Ruhl
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/Munich, Germany
R. Rehmet
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/Munich, Germany
M. Knoživá
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/Munich, Germany
S. Vepřek*
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-W-8046 Garching/Munich, Germany
*
*Author to whom correspondence should be addressed
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Abstract

With the decreasing minimum feature size of integrated microcircuits, a low-temperature, chlorine-free CVD process is needed for the deposition of TiN diffusion barriers. A problem during the thermal deposition of titanium nitride from organometallic precursors, such as tetrakis(dimethylamido)titanium, is the high content of carbon in the films. In situ XPS study reveals that most of the carbon is present as CHx inclusions with a smaller but not negligible amount of carbidic component. This can be avoided by using ammonia, but the high rate of the reaction in the gas phase makes the control of the film growth difficult. Most of the problems can be resolved when using hydrogen afterglow.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 461
Copyright
Copyright © Materials Research Society 1993

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