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In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy

  • J. A. Roth (a1), T. J. De Lyon (a1) and M. E. Adel (a2)

Abstract

The use of band-edge reflection spectroscopy (BRS) to determine the substrate temperature during MBE is reviewed. Data are presented for Si, GaAs, InP and CdZnTe substrates, and the use of BRS during the growth of ZnTe on Si is demonstrated. We discuss complications that arise due to optical interference in the epitaxial layers, and methods to compensate for the effects of interference are described.

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In Situ Substrate Temperature Measurement During MBE by Band-Edge Reflection Spectroscopy

  • J. A. Roth (a1), T. J. De Lyon (a1) and M. E. Adel (a2)

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