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In Situ Stress Measurements during the reaction of WF6 with Si(100)

  • G. J. Leusink (a1), C. Th. H. Heerkens (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)

Abstract

We present measurements on the intrinsic stress developing during chemical vapour deposition of W and WSi2 from the reaction between WF6 and Si (100). It will be shown that depending on temperature and WF6 partial pressure, three growth modes, corresponding with three different stress developments, can be distinguished. The results can be explained with three basic processes. The intrinsic tensile stress during the deposition of self limited W can be as high as 2 GPa.

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In Situ Stress Measurements during the reaction of WF6 with Si(100)

  • G. J. Leusink (a1), C. Th. H. Heerkens (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)

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