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In Situ Spectroscopic Ellipsometry for Real Time Semiconductor Growth Monitor†

Published online by Cambridge University Press:  25 February 2011

Blaine Johs ,
Duane Meyer ,
Gerald Cooney ,
Huade Yao ,
Paul G. Snyder ,
John A. Woollam ,
John Edwards  and
George Maracas
Blaine Johs
Affiliation:
J.A. Woollam Co., 315 South 9th, Suite 22, Lincoln, NE 68508
Duane Meyer
Affiliation:
J.A. Woollam Co., 315 South 9th, Suite 22, Lincoln, NE 68508
Gerald Cooney
Affiliation:
J.A. Woollam Co., 315 South 9th, Suite 22, Lincoln, NE 68508
Huade Yao
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588-0511
Paul G. Snyder
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588-0511
John A. Woollam
Affiliation:
Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588-0511
John Edwards
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
George Maracas
Affiliation:
Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287
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Abstract

A modular spectroscopic ellipsometer for in situ and ex situ materials analysis is described, and results for in situ MBE growth of GaAs/AlGaAs are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 459
Copyright
Copyright © Materials Research Society 1991

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Footnotes

†

Research supported by DARPA Contract DAAH01-89-C-0357, NASA Lewis Grant NAG-3-154, and DARPA/URI Contract N00014-89-J-3120.

References

† Research supported by DARPA Contract DAAH01-89-C-0357, NASA Lewis Grant NAG-3-154, and DARPA/URI Contract N00014-89-J-3120.