Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T12:48:38.922Z Has data issue: false hasContentIssue false

In Situ Real-Time Studies of Oxygen Incorporation in Complex Oxide Thin Films Using Spectroscopic Ellipsometry and Ion Scattering and Recoil Spectrometry

Published online by Cambridge University Press:  10 February 2011

A.H. Mueller
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
Y. Gao
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
E.A. Irene
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill
O. Auciello
Affiliation:
Material Science and Chemistry Division, Argonne National Laboratory
A.R. Krauss
Affiliation:
Material Science and Chemistry Division, Argonne National Laboratory
J.A. Schultz
Affiliation:
Ionwerks Inc., Houston, Texas
Get access

Abstract

The surface termination of c-axis oriented YBa2Cu3O7-δ (YBCO) and the oxygen incorporation mechanism has been investigated using a unique combination of spectroscopic ellipsometry (SE) and time of flight ion scattering and recoil spectrometry (ToF-ISARS). The high surface sensitivity of the ToF-ISARS technique combined with the bulk oxygen sensitivity of SE are shown to yield complimentary information. The SE provided the film orientation and quality, while ToF-ISARS supplied surface compositional and structural information and enabled isotopic 18O tracer studies. It was determined that the 0 content of the film had little effect on the surface termination of the film, indicating a lack of labile Cu(l) sites at the c-axis oriented YBCO surface. Also, strong evidence for a Ba or BaO terminated structure is shown. The data related to the 18O tracer studies indicate that O from the reaction ambient incorporates only into the labile Cu(1) sites during both deposition and annealing, while stable O sites were populated with O from the sputtered target, indicating either the need for sputtered atomic O or sputtered YCuO complexes to occupy the stable Cu(2) sites.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kelly, M.K., Barboux, P., Tarascon, J.-M., Aspnes, D.E., Bonner, W.A., and Morris, P.A., Phys.Rev. 38, 870 (1988)Google Scholar
2 Michaelis, A., Irene, E.A., Auciello, O., and Krauss, A.R.; J. Appl. Phys. 83 (12), pp. 77367743, 1998.Google Scholar
3 Gao, Y., Mueller, A.H., Irene, E.A., Auciello, O., Krauss, A.R., and Shultz, J.A.; J. Vac. Sci. Technol. A, 17 (4) pp.18801886, 1999.Google Scholar
4 Kircher, J., Kelley, M.K., Rashkeev, S., Alouani, M., Fuchs, D., and Cardona, M.; Phys. Rev. B, 44 (1) pp.217224, 1991.Google Scholar
5 Chen, Y., Zhang, J., and Wu, Ziliang; Supercond. Sci. Technol., 5 pp.463466, 1992.Google Scholar
6 Aarnink, W.A.M., Isselsteijn, R.P.J., Gao, J., Silfhout, A. von, and Rogalla, H.; Phys Rev B, 45 (13) 002, 1992.Google Scholar
7 Lee, S.H., Bae, S.C., Ku, J.K., and Shin, H.J.; Phys Rev. B, 46 (14), pp. 91429146, 1992.Google Scholar
8 Jorgensen, J.D., Veal, B.W., Paulikas, A.P., Nowicki, L.J., Crabtree, G.W., Claus, H., and Kwok, W.K.; Phys. Rev. B, 41 (4) pp.18631877, 1990 Google Scholar
9 Tsuda, K., Suzuki, T., Matsui, T., Kimura, H., Nagano, M., and Mukae, K.; Phase Transitions, 41 pp.159163, 1993 Google Scholar
10 Matsubara, M., Morishita, T., and Hirabashi, I, Appl. Phys Lett. 64 (14), pp. 18681870, 1994 Google Scholar
11 Haage, T., Jiang, Q.D., Cardona, M., Habermeister, H.U., Zegenhagen, J; Appl. Phys Lett, 68 (17) pp. 24272429, 1996 Google Scholar
12 Wen, J.G., Morishita, T., Koshizuka, N., Traeholt, C., and Zanderbergen, H.W.; Appl. Phys. Lett. 66 (14) pp.18301832, 1995.Google Scholar
13 Mueller, A.H., Gao, Y., Irene, E.A., Auciello, O., Krauss, A. and Schultz, J. A., Combined Spectroscopic Ellipsometry and Ion Beam Surface Analysis for In-Situ Real Time Characterization of Complex Oxide Film Growth Processes, Proceedings of the 1999 Materials Research Society Meeting, Symposium U.Google Scholar
14 Klotz, A.L., Klein, M.V., Lee, W.C., Giapintzakis, J., Ginsberg, D.M., and Veal, B.W.; Phys. Rev. B, 45 (5) pp. 25772580, 1992.Google Scholar
15 Michaelis, A., Irene, E.A., Auciello, O., Krauss, A.R., and Veal, B.; Thin Solid Films, 313–314 pp. 362367, 1998.Google Scholar