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Impurity Segregation in A/A1−xBx Heterostructures During Liquid Phase Epitaxy

  • Stephen J. Cook (a1) and Paillette Clancy (a1)

Abstract

The segregation behavior of model dopants during liquid phase epitaxy of A/A1−xBx heterostructures is studied using Non-equilibrium Molecular Dynamics computer simulation. Interatomic interactions are modelled using the Lennard-Jones potential and the dopant “B” atoms are assigned to have a different diameter than the host “A” atoms. The extent of segregation as a function of regrowth velocity is found to be well represented by the Continuous Growth Model of Aziz for solidification on the (111) orientation. The mechanism of segregation, however, more closely resembles the physical picture due to Jackson, Gilmer and Leamy.

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1. Abelson, J.R., Sigmon, T.W., Kim, K.B. and Weiner, K.H., Appl. Phys. Lett. 52, 230 (1988).
2. Smith, P.M., Lombardo, S., Uttomark, M.J., Cook, S.J. and Thompson, M.O., Mat. Res. Soc. Symp. Proc. In Press 1991.
3. Aziz, M.J. and Kaplan, T., Acta metall. 36, 2335 (1988).
4. Jackson, K.A., Can. J. Phys. 36, 683 (1958).
5. Jackson, K.A., Gilmer, G.H. and Leamy, H.J., in “Laser and Electron Beam Processing of Materials” (White, C.W. and Peercy, P.S., eds.), Academic Press, New York 1980.

Impurity Segregation in A/A1−xBx Heterostructures During Liquid Phase Epitaxy

  • Stephen J. Cook (a1) and Paillette Clancy (a1)

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