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Impurity Segregation in A/A1−xBx Heterostructures During Liquid Phase Epitaxy

Published online by Cambridge University Press:  21 February 2011

Stephen J. Cook  and
Paillette Clancy
Stephen J. Cook
Affiliation:
Cornell University, School of Chemical Engineering, Ithaca, New York 14853
Paillette Clancy
Affiliation:
Cornell University, School of Chemical Engineering, Ithaca, New York 14853
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Abstract

The segregation behavior of model dopants during liquid phase epitaxy of A/A1−xBx heterostructures is studied using Non-equilibrium Molecular Dynamics computer simulation. Interatomic interactions are modelled using the Lennard-Jones potential and the dopant “B” atoms are assigned to have a different diameter than the host “A” atoms. The extent of segregation as a function of regrowth velocity is found to be well represented by the Continuous Growth Model of Aziz for solidification on the (111) orientation. The mechanism of segregation, however, more closely resembles the physical picture due to Jackson, Gilmer and Leamy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 229
Copyright
Copyright © Materials Research Society 1992

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References

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