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Impurity Effects of Metal Ions in Chalcogenide Glass Films

Published online by Cambridge University Press:  25 February 2011

M. Suzuki ,
S. Okano ,
S. Machi  and
H. Yamakawa
M. Suzuki
Affiliation:
Kanazawa University, Dept. of Electrical and Computer Engineering, 2-40-20 Kodatsuno, Kanazawa 920, Japan
S. Okano
Affiliation:
Kanazawa University, Dept. of Electrical and Computer Engineering, 2-40-20 Kodatsuno, Kanazawa 920, Japan
S. Machi
Affiliation:
Kanazawa University, Dept. of Electrical and Computer Engineering, 2-40-20 Kodatsuno, Kanazawa 920, Japan
H. Yamakawa
Affiliation:
Kanazawa University, Dept. of Electrical and Computer Engineering, 2-40-20 Kodatsuno, Kanazawa 920, Japan
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Abstract

Doping effects of metal ions in chalcogenide glass films were studied. Doped impurities were found to act as donor or acceptor centers, when impurity ions were introduced in chalcogenide glass films below the glass transition temperature. Rectifying effects were realized in chalcogenide glass films doped with Al, Cd and Mg, so it is certain that the p-n junction was formed by the impurity doping. The tunneling of electrons through gap states, however, appeared to increase the reverse current of heavily doped diodes, so that large rectifying effects were not attained. A high density of defect states especially in the surface region would be responsible for low temperature diffusion of metal ions.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 375
Copyright
Copyright © Materials Research Society 1986

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