No CrossRef data available.
Article contents
Improvement of Threshold Voltage Degradation Characteristics of a-Si:H TFT by Pre-Electrical Bias-Aging for Amoled Display
Published online by Cambridge University Press: 01 February 2011
Abstract
We propose a pre-electrical bias aging to reduce threshold voltage (Vth) shift of hydrogenated- amorphous silicon thin-film transistor (a-Si:H TFT) for AMOLED display. The quantity of Vth shift in the sample subjected to a bias-aging is reduced due to the reduction of created dangling bond density, compared with a sample without a bias-aging. When an identical stress duration of 50,000 sec is applied to a-Si:H TFT with or without a pre-electrical bias-aging, the created dangling bond density (ΔNDB) after a pre-electrical bias-aging is decreased from 1.38 × 1011/cm2 to 0.685 × 1011/cm2. Our experimental results indicate that after the pre-electrical bias aging, a newly created dangling bond during an electrical stress is decreased because a weak bond density and hydrogen diffusion may be decreased.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2006
References
1.
Stewart, M., “Polysilicon TFT Technology for Active Matrix OLED Displays.” IEEE Trans. on Electron Devices, Vol. 48, No. 5, pp. 845–851, 2001.Google Scholar
2.
Nathan, A., “Amorphous Silicon Thin Film Transistor Circuit Integration for Organic LED Displays on Glass and Plastic”, IEEE Journal of Solid-State Circuits, vol.39, pp.1477–1486, 2004.Google Scholar
3.
Powell, M.J., “The Physics of Amorphous-Silicon Thin-Film Transistors”, IEEE Trans. on Electron Devices, Vol. 36, No. 12, pp. 2753–2763, 1989.Google Scholar
4.
Powell, M.J., “Defect pool in amorphous silicon thin-film transistors”, Phys.Rev.B, vol. 45, pp.4160–4170, 1992.Google Scholar
5.
Jackson, W.B., “Creation of near interface defects in hydrogenated amorphous siliconsilicon nitride hetero junctions: The role of hydrogen”, Phys.Rev.B, vol. 36, pp.6217–6220, 1987.Google Scholar