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Improvement of Retention Property of YMnO3/Y2O3/Si MFIS Capacitor

Published online by Cambridge University Press:  21 March 2011

Norifumi Fujimura Daisuke Ito ,
Kousuke Kakuno  and
Taichiro Ito
Norifumi Fujimura Daisuke Ito
Affiliation:
Dept. of Applied Materials Science, Graduate school of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japanfujim@ams.osakafu-u.ac.jp
Kousuke Kakuno
Affiliation:
Dept. of Applied Materials Science, Graduate school of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
Taichiro Ito
Affiliation:
Dept. of Applied Materials Science, Graduate school of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Abstract

We have been proposing YMnO3 with low remanent polarization and permittivity as a ferroelectric gate transistor, and reported that c-oriented YMnO3 films were obtained on (111)Si with (111) oriented Y2O3 buffer layer. The ferroelectricity was confirmed by pulsed C-V measurement. However, the retention property was not satisfied because of its poor crystallinity. To improve the crystallinity of YMnO3 films, deposition conditions of Pulsed Laser Deposition (PLD) were optimized. The laser power, oxygen pressure and introducing Ozone gas are effective for maintaining the stoichiometry during the deposition. Improvement of the crystallinity of the YMnO3 film makes the retention property better. We also demonstrate the use of epitaxially grown Y2O3 buffer layer to improve the crystallinity of the YMnO3 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.11.1
Copyright
Copyright © Materials Research Society 2001

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