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Improvement of Photoelectrochemical Reaction for Hydrogen Generation from Water using N-face GaN

Published online by Cambridge University Press:  31 January 2011

Katsushi Fujii ,
Keiichi Sato ,
Takashi Kato ,
Tsutomu Minegishi  and
Takafumi Yao
Katsushi Fujii
Affiliation:
k.fujii@cir.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Miyagi, Japan
Keiichi Sato
Affiliation:
satok1@imr.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Takashi Kato
Affiliation:
takashi_h_katou@fujifilm.co.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Tsutomu Minegishi
Affiliation:
tmine@imr.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
Takafumi Yao
Affiliation:
tyao@cir.tohoku.ac.jp, Tohoku University, Center for interdisciplinary research, Sendai, Japan
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Abstract

Photoelectrochemical properties of Ga- and N-face GaN grown by hydride vapor phase epitaxy (HVPE) were investigated. The properties were also compared with Ga-face GaN grown by metal-organic vapor phase epitaxy (MOVPE). The flatband potentials were in order of Ga-face GaN grown by MOVPE < N-face GaN < Ga-face GaN. The highest photocurrent density at zero bias was obtained from the N-face GaN. The photocurrent density was over 3 times larger than that of Ga-face GaN.

Keywords

energy generationIII-Vwater
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I07-03
Copyright
Copyright © Materials Research Society 2010

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References

1for example Nozik, A.J. and Memming, R., J. Phys. Chem. 100, 13061 (1996).10.1021/jp953720eGoogle Scholar
2 Grimes, C. A., Varghese, O. K. and Ranjan, S., Light, Water, Hydrogen, (Springer, New York, 2008), pp. 399-400, pp. 462–464.10.1007/978-0-387-68238-9Google Scholar
3 Kocha, S. S., Peterson, M. W., Arent, D. J., Redwing, J. M., Tischler, M. A. and Turner, J. A., J. Electrochem. Soc., 142, L238 (1995).10.1149/1.2048511Google Scholar
4 Ono, M., Fujii, K., Ito, T., Iwaki, Y., Hirako, A., Yao, T. and Ohkawa, K., J. Chem. Phys., 126, 054708 (2007).10.1063/1.2432116Google Scholar
5 Fujii, K., Ono, M., Ito, T., Iwaki, Y., A. Hirako and K. Ohkawa, J. Electrochem. Soc., 154, B175 (2007).10.1149/1.2402104Google Scholar
6 Arai, N., Saito, N., Nishiyama, H., Inoue, Y., Domen, K. and Sato, K., Chem. Lett., 35, 796 (2006).10.1246/cl.2006.796Google Scholar
7 Fujii, K., Iwaki, Y., Masui, H., Baker, T. J., Iza, M., Sato, H., Kaeding, J., Yao, T., Speck, J. S., DenBaars, S. P., Nakamura, S. and Ohkawa, K., Jpn. J. Appl. Phys., 46, 6573 (2007).Google Scholar