Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-25T17:21:09.295Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Operating Voltage and Luminescent Properties in Nanocrystalline Silicon Electroluminescent Device

Published online by Cambridge University Press:  01 February 2011

K. Sato ,
K. Hirakuri  and
T. Izumi
K. Sato
Affiliation:
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama, 350–0394, JAPAN Department of Applied Science, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
K. Hirakuri
Affiliation:
Department of Electronic and Computer Engineering, Tokyo Denki University, Ishizaka, Hatoyama, Hikigun, Saitama, 350–0394, JAPAN
T. Izumi
Affiliation:
Research Institute of Science and Technology, Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa, 259–1292, JAPAN
Get access

Abstract

We have investigated direct current (DC) operating voltage and luminescence properties of electroluminescent (EL) devices with and/or without a silicon dioxide (SiO2) layer in nanocrystalline Si (nc-Si) region/Si substrate interface. The device with the SiO2 layer showed red luminescence with a peak at 670 nm by applying the DC operating voltage above 4.0 V. When the SiO2 layer in the device was completely removed by the hydrofluoric acid (HF) treatment, the red luminescence from the device was observed at the DC operating voltage of 2.0 V. Moreover, the luminescent intensity was also increased more than one order of magnitude, because carriers were efficiently and easily injected into the nc-Si region by the removal of SiO2 layer. The red luminescence from the device could be clearly seen with the naked eye under the DC operating voltage above 3.0 V. These results indicate that the removal of SiO2 layer leads to the lowering of DC operating voltage and increase of luminance for the nc-Si based EL device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.13
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sato, K., Hirakuri, K., Iwase, M. and Izumi, T., J. Nanosci. Nanotech. (in press).Google Scholar
2. Photopoulos, P. and Nassiopoulou, A. G., Appl. Phys. Lett. 77, 1816 (2000).Google Scholar
3. Fujita, S. and Sugiyama, N., Appl. Phys. Lett. 74, 308 (1999).Google Scholar
4. DiMaria, D. J., Kirtley, J. R., Pakulis, E. J., Dong, D. W., Kuan, T. S., Pesavento, F. L., Theis, T. N., Cutro, J. A. and Brorson, S. D., J. Appl. Phys. 56, 401 (1984).Google Scholar
5. Sato, K., Izumi, T., Iwase, M., Show, Y., Morisaki, H., Yaguchi, T. and Kamino, T., Appl. Surf. Sci. 216, 376 (2003).Google Scholar
6. Theiβ, W., Surf. Sci. Rep. 29, 91 (1997).Google Scholar