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Improved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions

Published online by Cambridge University Press:  26 February 2011

A. Piotrowska ,
E. Papis ,
K. Golaszewska ,
R. Lukasiewicz ,
E. Kaminska ,
T. T. Piotrowski ,
R. Kruszka ,
A. Kudla ,
J. Rutkowski  and
J. Szade
...Show all authors
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
E. Papis
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
K. Golaszewska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
R. Lukasiewicz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
T. T. Piotrowski
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
R. Kruszka
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
A. Kudla
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
J. Rutkowski
Affiliation:
Institute of Physics, Military Academy of Technology, 00–908 Warsaw, Poland
J. Szade
Affiliation:
Institute of Physics, University of Silesia, 40–020 Katowice, Poland
A. Winiarski
Affiliation:
Institute of Physics, University of Silesia, 40–020 Katowice, Poland
A. Wawro
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
M. Aleszkiewicz
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 32/46, 02–668 Warsaw, Poland
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Abstract

Sulfur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb mesatype photodiodes operating in wavelengths range 1.9 – 2.3 μm have been investigated. (NH4)2S, Na2S, and (NH2)2CS have been chosen as sulfur sources in either aqueous or C3H7OH solutions. Electrochemical passivation of mesa side walls was proven to reduce photodiodes dark current and increasing their differential resistance by a factor of 4. As a result devices characterized by the detectivity of 1.5–2×1010 cmHz1/2/W and dark current density of 20 mA/cm2 at –0.5V bias have been fabricated and their long-term stability has been proven.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B6.8
Copyright
Copyright © Materials Research Society 2005

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References

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