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Improved Passivation of Silicon Solar Cells Using Combined Low-Energy Hydrogen Implantation and Optical Processing

Published online by Cambridge University Press:  21 February 2011

Bhushan L. Sopori
Bhushan L. Sopori*
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO
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Abstract

An improved technique for impurity/defect passivation of silicon solar cells is described. A low-energy hydrogen implantation is performed from the back side of solar cells to produce a deep hydrogen diffusion. The deep diffusion is believed to be caused by the formation of a mobile hydrogen-vacancy (H-V) complex. Next, a layer of Al is deposited on the hydrogenated side and an Optical Processing (OP) step is performed. The OP step accomplishes several objectives that include formation of an ohmic contact, dissociation of H-V complexes to release hydrogen that can participate in further passivation, and dissolution and regrowth of the highly defected surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 363
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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